TR2020-077

A Fully-Integrated GaN Doherty Power Amplifier Module with a Compact Frequency-Dependent Compensation Circuit for 5G massive MIMO Base Stations


    •  Sakata, S., Kato, K., Teranishi, E., Sugitani, T., Ma, R., Chuang, K., Wu, Y., Fukunaga, K., Komatsuszaki, Y., Kenichi, H., Yamanaka, K., Shinjo, S., "A Fully-Integrated GaN Doherty Power Amplifier Module with a Compact Frequency-Dependent Compensation Circuit for 5G massive MIMO Base Stations", IEEE International Microwave Symposium (IMS), June 2020.
      BibTeX TR2020-077 PDF
      • @inproceedings{Sakata2020jun,
      • author = {Sakata, Shuichi and Kato, Katsuya and Teranishi, Eri and Sugitani, Takumi and Ma, Rui and Chuang, Kevin and Wu, Yuchen and Fukunaga, Kei and Komatsuszaki, Yuji and Kenichi, Horiguchi and Yamanaka, Koji and Shinjo, Shintaro},
      • title = {A Fully-Integrated GaN Doherty Power Amplifier Module with a Compact Frequency-Dependent Compensation Circuit for 5G massive MIMO Base Stations},
      • booktitle = {IEEE International Microwave Symposium (IMS)},
      • year = 2020,
      • month = jun,
      • url = {https://www.merl.com/publications/TR2020-077}
      • }
  • MERL Contact:
  • Research Areas:

    Communications, Electronic and Photonic Devices, Signal Processing

This paper presents a fully-integrated two-stage GaN Doherty Power Amplifier (DPA) Module for 5G massive MIMO base stations. To overcome the size limitation of PAs in massive MIMO base-stations while meeting the wideband requirement, a new compact frequency-dependent compensating circuit with zero-phase offset in the peaking amplifier is proposed. The proposed circuit not only increases the bandwidth of the DPA, but also works as matching network, resulting in compact and flexible design. The proposed method is applied to a 10mmx6mm two-stage GaN DPA module. Measurements show that the DPA module achieves more than 50.4% drain efficiency and 42.9% PAE over 400MHz for 3.4-3.8GHz with -50dBc ACLR under 20MHz signal with PAPR of 8.0dB, after DPD. Furthermore, for 10 carrier aggregated signal (10x20MHz), the DPA exhibited 43.9% PAE with -48.6dBc ACLR after DPD. The proposed DPA has efficiency comparable to DPAs with larger sizes, demonstrating size advantage of the proposed configuration.

 

  • Related News & Events

    •  NEWS   Mitsubishi Electric Corporation and MERL Press Release Describes New 5G GaN Power Amplifier Technology
      Date: July 14, 2020
      Where: Tokyo, Japan
      MERL Contact: Rui Ma
      Research Areas: Communications, Electronic and Photonic Devices
      Brief
      • Mitsubishi Electric Corporation announced today its developement of a new technology to realize a gallium nitride (GaN) power amplifier module for 5G base-stations that offers a combination of compact (6mm by 10mm) footprint and high power-efficiency, the latter exceeding an unprecedented rating of 43%.

        MERL and Mitsubishi Electric researchers collaborated to develop high density mounting technology and matching circuit that uses a minimum number of chip components to achieve efficient, wide-band power amplification in the 3.4-3.8GHz bands used for 5G communication.

        Please see the link below for the full Mitsubishi Electric press release text. Technical details of the new module will be presented at the IEEE International Microwave Symposium this coming August.
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