TR2020-080

A Dual-Mode Bias Circuit Enabled GaN Doherty Amplifier Operating in 0.85-2.05GHz and 2.4-4.2GHz


    •  Komatsuszaki, Y., Ma, R., Sakata, S., Nakatani, K., Shinjo, S., "A Dual-Mode Bias Circuit Enabled GaN Doherty Amplifier Operating in 0.85-2.05GHz and 2.4-4.2GHz", IEEE International Microwave Symposium (IMS), June 2020.
      BibTeX TR2020-080 PDF
      • @inproceedings{Komatsuszaki2020jun,
      • author = {Komatsuszaki, Yuji and Ma, Rui and Sakata, Shuichi and Nakatani, Keigo and Shinjo, Shintaro},
      • title = {A Dual-Mode Bias Circuit Enabled GaN Doherty Amplifier Operating in 0.85-2.05GHz and 2.4-4.2GHz},
      • booktitle = {IEEE International Microwave Symposium (IMS)},
      • year = 2020,
      • month = jun,
      • url = {https://www.merl.com/publications/TR2020-080}
      • }
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  • Research Areas:

    Communications, Electronic and Photonic Devices, Signal Processing

We report an ultra-wideband and high efficiency sub-6GHz power amplifier, which is based on multi-band Doherty load modulation. Key novelty is that a dual-mode bias circuit which operate as frequency-dependent compensating circuit at a half of center frequency 0.5f0 mode, and DC-block and RF-choke at a center frequency f0 mode. The amplifier using 0.15-um GaN HEMT FETs achieved drain efficiency of 41.4-58.2% over 0.85-2.05GHz with 0.5f0 mode, and 43.5-62.1% over 2.4-4.2GHz with f0 mode at 6dB power back-off. This, to the best of authors’ knowledge, is the widest coverage of frequency reported so far for a multi-band Doherty amplifier at these carrier frequency range. It is a very promising PA technology for sub 6GHz base station, enabling reduction of the total cost of ownership (TCO) for operators.