Chungwei Lin

Chungwei Lin
  • Biography

    Before joining MERL as a visiting member research staff, Chungwei was a postdoctoral researcher in the Physics Department of the University of Texas at Austin. He has worked on transition metal oxides including manganites and titanates. His particular interest is the use of doping/interface to control optical, thermal, and transport properties. In addition to oxides, he has worked on the theory of self-assembly, configuration interaction quantum impurity solvers, and the theory of photoemission spectroscopy.

  • Internships with Chungwei

    • MP1189: nano-particle properties

      MERL is searching for a graduate student to work on properties of nano-particles. Ideal candidates will have a strong background in physics modeling, particularly for hysteresis phenomena. Experience on Ab Initio computations (including density functional theory for material properties or finite-difference-time-domain for optical property) is a plus but not required. The intern is expected to explain experimental measurements. The expected duration is 3 months. Mitsubishi Electric Research Laboratories, Inc. is an Equal Opportunity Employer. Please see our website http://www.merl.com for information relating to our research, and http://www.merl.com/publications/ to explore our publications.

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  • MERL Publications

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  • MERL Issued Patents

    • Title: "Semiconductor Device with Multi-Function P-Type Diamond Gate"
      Inventors: Teo, Koon Hoo; Tang, Chenjie; Lin, Chungwei
      Patent No.: 9,780,181
      Issue Date: Oct 3, 2017
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