TR2019-160

Gate Leakage Mechanisms and Modeling in GaN based High Electron Mobility Transistors – Literature Survey


    •  Li, K., Teo, K.H., "Gate Leakage Mechanisms and Modeling in GaN based High Electron Mobility Transistors – Literature Survey," Tech. Rep. TR2019-160, Mitsubishi Electric Research Laboratories, December 2019.
      BibTeX TR2019-160 PDF
      • @techreport{Li2019sep,
      • author = {Li, Kexin and Teo, Koon Hoo},
      • title = {Gate Leakage Mechanisms and Modeling in GaN based High Electron Mobility Transistors – Literature Survey},
      • institution = {Mitsubishi Electric Research Laboratories},
      • year = 2019,
      • month = dec,
      • url = {https://www.merl.com/publications/TR2019-160}
      • }
  • MERL Contact:
  • Research Areas:

    Applied Physics, Electronic and Photonic Devices

This is a survey report on the reliability issues of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). It particularly focused on the reliability issue of the device gate leakage.