NEWS  |  ISPSD 2013: publication by Rui Ma, Koon Hoo Teo and others

Date released: May 26, 2013


  •  NEWS   ISPSD 2013: publication by Rui Ma, Koon Hoo Teo and others
  • Date:

    May 26, 2013

  • Description:

    The paper "Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure" by Feng, P., Teo, K.H., Oishi, T., Yamanaka, K. and Ma, R. was presented at the International Symposium on Power Semiconductor Devices and ICs (ISPSD).

  • Where:

    International Symposium on Power Semiconductor Devices and ICs (ISPSD)

  • MERL Contacts:
  • Research Areas:

    Applied Physics, Electronic and Photonic Devices

    •  Feng, P., Teo, K.H., Oishi, T., Yamanaka, K., Ma, R., "Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure", International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2013.
      BibTeX TR2013-036 PDF
      • @inproceedings{Feng2013may,
      • author = {Feng, P. and Teo, K.H. and Oishi, T. and Yamanaka, K. and Ma, R.},
      • title = {Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure},
      • booktitle = {International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
      • year = 2013,
      • month = may,
      • url = {https://www.merl.com/publications/TR2013-036}
      • }