TR2017-160

GaN PA for 4G LTE-Advanced and 5G


    •  Ma, R., Teo, K.H., Shinjo, S., Yamanaka, K., Asbeck, P., "GaN PA for 4G LTE-Advanced and 5G", IEEE Microwave Magazine, DOI: 10.1109/MMM.2017.2738498, ISSN: 1527-3342, Vol. 18, No. 7, pp. 77-85, October 2017.
      BibTeX Download PDF
      • @article{Ma2017oct,
      • author = {Ma, Rui and Teo, Koon Hoo and Shinjo, Shintaro and Yamanaka, Koji and Asbeck, Peter},
      • title = {GaN PA for 4G LTE-Advanced and 5G},
      • journal = {IEEE Microwave Magazine},
      • year = 2017,
      • volume = 18,
      • number = 7,
      • pages = {77--85},
      • month = oct,
      • doi = {10.1109/MMM.2017.2738498},
      • issn = {1527-3342},
      • url = {https://www.merl.com/publications/TR2017-160}
      • }
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  • Research Area:

    Electric Systems


This paper reviews the state-of-the-art of RF power amplifiers technologies in cellular base station for 4G and coming 5G mobile wireless communications. GaN device technologies enable various advanced power amplifiers architectures to offer high efficiency, and high power applications for wide band signal transmission. It summarize the system-level requirement posed by 5G new radios and outlooks the potential challenges and opportunities of advanced GaN PA developments.