TR2017-152
Simulation of GaN HEMT with Wide-Linear-Range Transconductance
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- , "Simulation of GaN HEMT with Wide-Linear-Range Transconductance", IEEE Electron Devices and Solid-State Circuits Conference, DOI: 10.1109/EDSSC.2017.8126442, October 2017.BibTeX TR2017-152 PDF
- @inproceedings{Teo2017oct,
- author = {Teo, Koon Hoo and Shi, Junxia},
- title = {Simulation of GaN HEMT with Wide-Linear-Range Transconductance},
- booktitle = {IEEE Electron Devices and Solid-State Circuits Conference},
- year = 2017,
- month = oct,
- doi = {10.1109/EDSSC.2017.8126442},
- url = {https://www.merl.com/publications/TR2017-152}
- }
- , "Simulation of GaN HEMT with Wide-Linear-Range Transconductance", IEEE Electron Devices and Solid-State Circuits Conference, DOI: 10.1109/EDSSC.2017.8126442, October 2017.
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Abstract:
This paper presents a simulation study to achieve wide-linear-range transconductance of T-gate GaN HEMTs by introducing a o-doped layer and a p-GaN back barrier. With optimized o-doping density and location, the transconductance (gm) and current gain cutoff frequencies (fr) are ultra-flat and remain close to their peak values over a wide range of gatesource voltages (Vgs). In addition, a smaller absolute gm3 (thirdorder derivative of the Ids-Vgs curve) over a wide range of Vgs is obtained in proposed HEMTs. These features are valuable in designing highly linear RF AlGaN/GaN HEMTs.