- "GaN HEMTs with Multi-functional p-Diamond Back-barriers", IEEE International Symposium on Power Semiconductor Devices (ISPSD), DOI: 10.1109/ISPSD.2016.7520789, June 2016, pp. 107-110. ,
Electronics & Communications, Power, RF
This work for the first time explores the use of p-diamond as multi-functional back-barriers in GaN high electron mobility transistors (HEMTs). A well-calibrated self-consistent electro-thermal simulation has revealed that multi-functional p-diamond back-barriers can improve the performance of HEMTs, by achieving over 3 times higher breakdown voltage (BV), at least 30% higher thermal performance, enhanced 2DEG confinement and reduced short channel effects. These results indicate the great potential of the integration of GaN and diamond electronics for high-power and high-frequency applications.