TR2013-121

Simulation Study of Gate Leakage Current Under Three-Terminal Operation for AlGaN/GaN HEMTs


    •  Oishi, T.; Hayashi, K.; Sasaki, H.; Yamaguchi, Y.; Teo, K.H.; Otsuka, H.; Yamanaka, K.; Nakayama, M.; Miyamoto, Y., "Simulation Study of Gate Leakage Current Under Three-Terminal Operation for AlGaN/GaN HEMTs", Topical Workshop on Heterostructure Microelectronics (TWHM), September 2013.
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      • @inproceedings{Oishi2013sep,
      • author = {Oishi, T. and Hayashi, K. and Sasaki, H. and Yamaguchi, Y. and Teo, K.H. and Otsuka, H. and Yamanaka, K. and Nakayama, M. and Miyamoto, Y.},
      • title = {Simulation Study of Gate Leakage Current Under Three-Terminal Operation for AlGaN/GaN HEMTs},
      • booktitle = {Topical Workshop on Heterostructure Microelectronics (TWHM)},
      • year = 2013,
      • month = sep,
      • url = {http://www.merl.com/publications/TR2013-121}
      • }
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On-state gate leakage current behavior of AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using Technology Computer Aided Design (TCAD) simulation. We found the gate leakage current increases above the pinch-off voltage, which is different from the case of a two-terminal operation. This gate leakage current increase is due to self-heating effect at the gate edge of the drain side where the gate leakage occurs.