TR2011-079

Design and Simulation of Enhancement-mode N-polar GaN Single-channel and Dual-channel MIS-HEMTs


    •  Feng, P.; Teo, K.H.; Oishi, T.; Nakayama, M.; Duan, C.; Zhang, J., "Design and Simulation of Enhancement-mode N-polar GaN Single-channel and Dual-channel MIS-HEMTs", International Semiconductor Device Research Symposium (ISDRS), DOI: 10.1109/ISDRS.2011.6135163, December 2011, pp. 1-2.
      BibTeX Download PDF
      • @inproceedings{Feng2011dec,
      • author = {Feng, P. and Teo, K.H. and Oishi, T. and Nakayama, M. and Duan, C. and Zhang, J.},
      • title = {Design and Simulation of Enhancement-mode N-polar GaN Single-channel and Dual-channel MIS-HEMTs},
      • booktitle = {International Semiconductor Device Research Symposium (ISDRS)},
      • year = 2011,
      • pages = {1--2},
      • month = dec,
      • doi = {10.1109/ISDRS.2011.6135163},
      • url = {http://www.merl.com/publications/TR2011-079}
      • }
  • MERL Contacts:
  • Research Areas:

    Electronics & Communications, RF


TR Image

GaN HEMTs have demonstrated higher power density and efficiency over existing technologies such as silicon and gallium arsenide (GaAs) based RF and microwave transistors [1]. Until recently, improvements in the design of GaN semiconductor device had focused on Ga-polar GaN based HEMTs. Lately, N-polar GaN shows the advantage over Ga-polar device in making enhancement-mode (E-mode) device with low access resistance, and in particular, for low voltage operation. An E-mode N-polar GaN MISFET device was demonstrated to achieve a threshold voltage of 1 V and a record-high drive current 0.74 A/mm at a gate length of 0.62 [2]. Unfortunately, there are few analytical and simulation models developed for E-mode N-polar GaN HEMT. Moreover, the drive current under low voltage bias for N-polar GaN HEMT is smaller than the state-of-the-art Ga-polar GaN HEMT. In this work, by 2-D simulations in Synopsys TCAD [3], we, for the first time, (1) investigated N-polar E-mode single channel GaN MIS-HEMT through simulations; (2) designed an E-mode N-polar GaN dual channel MIS-HEMT and identified the mechanism of the drive current enhancement.